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• Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces
  Ph. Ebert and K. Urban and M. Lagally Physical Review Lettersxx1994. 10.1103/physrevlett.72.840 .
  to vacancy anion by arrich on Feb 14, 2008, 2:23 AM
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• Charge Injection and STM-Induced Vacancy Migration on GaAs(110)
  G. Lengel and J. Harper and M. Weimer Physical Review Lettersxx1996. 10.1103/PhysRevLett.76.4725 .
  to vacancy anion by arrich and 1 other person on Feb 14, 2008, 2:23 AM
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• Electronic and structural properties of the As vacancy on the (110) surface of GaAs
  Hanchul Kim and James Chelikowsky Surface Sciencexx1998. 10.1016/s0039-6028(98)00202-7 .
  to vacancy anion by arrich on Feb 14, 2008, 2:23 AM
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