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Identification of surface anion antisite defects in (110) surfaces of III?V semiconductors
Ph.
Ebert
and P.
Quadbeck
and K.
Urban
and B.
Henninger
and K.
Horn
and G.
Schwarz
and J.
Neugebauer
and M.
Scheffler
Applied Physics Letters
xx2001.
10.1063/1.1408906 .
to
antisite
arsenic
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arrich
on Feb 14, 2008, 2:23 AM
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Electronic structure around an As antisite near the (110) surface of GaAs
Yusuke
Iguchi
and Takeo
Fujiwara
and Akira
Hida
and Koji
Maeda
Physical Review B (Condensed Matter and Materials Physics)
xx2005.
10.1103/PhysRevB.71.125328 .
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on Feb 14, 2008, 2:23 AM
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antisite
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(110)
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STM
adatom
ahmacdonald
anion
anion_vacancy
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arsenic
awschalom
center
conduction
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