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semiconductor
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No matching items.
Coherent Control and Polarization Readout of Individual Excitonic State s
B. Patton
,
U. Woggon
, and
W. Langbein
.
Phys. Rev. Lett.
95(26):266401
(
2005
)
B. Patton
,
U. Woggon
, and
W. Langbein
.
Phys. Rev. Lett.
95(26):266401
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
III-V
aluminium
arsenide;
coherence;
compounds;
excited
excitons;
gallium
interferometry
light
miconductors;
mixing;
multiwave
oscillations;
polarisation;
quantum
se
semiconductor
states;
wells;
III-V
aluminium
arsenide;
coherence;
compounds;
excited
excitons;
gallium
interferometry
light
miconductors;
mixing;
multiwave
oscillations;
polarisation;
quantum
se
semiconductor
states;
wells;
(0)
URL
DOI
TeX
Effect of phonon bottleneck on quantum-dot laser performance
M. Sugawara
,
K. Mukai
, and
H. Shoji
.
Appl.~Phys.~Lett.
71(19):2791--2793
(
1997
)
M. Sugawara
,
K. Mukai
, and
H. Shoji
.
Appl.~Phys.~Lett.
71(19):2791--2793
(
1997
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
carrier
compounds;
dots;
gallium
ground
indium
lasers;
lifetime
phonons;
quantum
semiconductor
semiconductors;
states;
III-V
arsenide;
carrier
compounds;
dots;
gallium
ground
indium
lasers;
lifetime
phonons;
quantum
semiconductor
semiconductors;
states;
(0)
URL
DOI
TeX
Spatial ordering of quantum dots in microdisks
Z. G. Xie
, and
G. S. Solomon
.
Appl.~Phys.~Lett.
87(9):093106
(
2005
)
Z. G. Xie
, and
G. S. Solomon
.
Appl.~Phys.~Lett.
87(9):093106
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
III-V
adsorbed
arsenide;
compounds;
diffusion
dots;
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growth;
indium
layers;
materials;
microcavities;
optical
photoluminescence;
quantum
semiconductor
semiconductors;
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III-V
adsorbed
arsenide;
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diffusion
dots;
gallium
growth;
indium
layers;
materials;
microcavities;
optical
photoluminescence;
quantum
semiconductor
semiconductors;
surface
(0)
URL
DOI
TeX
Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots
X. D. Wang
,
N. Liu
,
C. K. Shih
,
S. Govindaraju
, and
A. L. Holmes
.
Appl.~Phys.~Lett.
85(8):1356--1358
(
2004
)
X. D. Wang
,
N. Liu
,
C. K. Shih
,
S. Govindaraju
, and
A. L. Holmes
.
Appl.~Phys.~Lett.
85(8):1356--1358
(
2004
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
atomic
compounds;
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force
gallium
indium
internal
microscopy;
quantum
scanning
self-assembly;
semiconductor
semiconductors;
stresses
tunnelling
III-V
arsenide;
atomic
compounds;
dots;
force
gallium
indium
internal
microscopy;
quantum
scanning
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semiconductor
semiconductors;
stresses
tunnelling
(0)
URL
DOI
TeX
Size, shape, and stability of InAs quantum dots on the GaAs001 substrate
L. G. Wang
,
P. Kratzer
,
N. Moll
, and
M. Scheffler
.
Phys.~Rev.~B
62(3):1897--1904
(
2000
)
L. G. Wang
,
P. Kratzer
,
N. Moll
, and
M. Scheffler
.
Phys.~Rev.~B
62(3):1897--1904
(
2000
)
4 years and 3 months ago
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bronckobuster
1
III-V
arsenide;
compounds;
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gallium
growth;
indium
island
layers;
quantum
self-assembly
semiconductor
semiconductors;
structure;
III-V
arsenide;
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epitaxial
gallium
growth;
indium
island
layers;
quantum
self-assembly
semiconductor
semiconductors;
structure;
(0)
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TeX
Shape and Composition Map of a Prepyramid Quantum Dot
B. J. Spencer
, and
M. Blanariu
.
Phys.~Rev.~Lett.
95(20):206101
(
2005
)
B. J. Spencer
, and
M. Blanariu
.
Phys.~Rev.~Lett.
95(20):206101
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
Ge-Si
III-V
alloys;
arsenide;
compounds;
diffusion;
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elemental
epitaxial
gallium
indium
island
layers
quantum
segregation;
semiconductor
semiconductors;
silicon;
structure;
surface
Ge-Si
III-V
alloys;
arsenide;
compounds;
diffusion;
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elemental
epitaxial
gallium
indium
island
layers
quantum
segregation;
semiconductor
semiconductors;
silicon;
structure;
surface
(0)
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TeX
Single Photon Detection with a Quantum Dot Transistor
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
M. L. Leadbeater
,
N. K. Patel
,
R. A. Hogg
,
C. E. Norman
,
N. J. Curson
, and
M. Pepper
.
Jpn.~J.~Appl.~Phys.
(
2001
)
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
M. L. Leadbeater
,
N. K. Patel
,
R. A. Hogg
,
C. E. Norman
,
N. J. Curson
, and
M. Pepper
.
Jpn.~J.~Appl.~Phys.
(
2001
)
4 years and 3 months ago
by
bronckobuster
1
III-V
aluminium
arsenide;
compounds
criticality;
dots;
effect
field
gallium
quantum
self-organised
semiconductor
semiconductors;
transistors;
III-V
aluminium
arsenide;
compounds
criticality;
dots;
effect
field
gallium
quantum
self-organised
semiconductor
semiconductors;
transistors;
(0)
URL
DOI
TeX
Detection of single photons using a field-effect transistor gated by a layer of quantum dots
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
R. A. Hogg
,
M. L. Leadbeater
,
C. E. Norman
, and
M. Pepper
.
Appl.~Phys.~Lett.
76(25):3673--3675
(
2000
)
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
R. A. Hogg
,
M. L. Leadbeater
,
C. E. Norman
, and
M. Pepper
.
Appl.~Phys.~Lett.
76(25):3673--3675
(
2000
)
4 years and 3 months ago
by
bronckobuster
1
III-V
aluminium
arsenide;
compounds;
dots;
electron
gallium
high
mobility
photodetectors
quantum
semiconductor
semiconductors;
transistors;
III-V
aluminium
arsenide;
compounds;
dots;
electron
gallium
high
mobility
photodetectors
quantum
semiconductor
semiconductors;
transistors;
(0)
URL
DOI
TeX
Kinetic instabilities during plasma etching of GaAs001
S. W. Robey
.
Phys.~Rev.~B
65(11):115306
(
2002
)
S. W. Robey
.
Phys.~Rev.~B
65(11):115306
(
2002
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
desorption;
diffusion;
etching;
gallium
modelling
process
semiconductor
semiconductors;
sputter
structure;
surface
topography;
III-V
arsenide;
desorption;
diffusion;
etching;
gallium
modelling
process
semiconductor
semiconductors;
sputter
structure;
surface
topography;
(0)
URL
DOI
TeX
Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering
T. Pinnington
,
Y. Levy
,
J. A. MacKenzie
, and
T. Tiedje
.
Phys.~Rev.~B
60(23):15901--15909
(
1999
)
T. Pinnington
,
Y. Levy
,
J. A. MacKenzie
, and
T. Tiedje
.
Phys.~Rev.~B
60(23):15901--15909
(
1999
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
beam
compounds;
diffraction;
dots;
electron
energy
epitaxial
gallium
growth
growth;
high
indium
layers;
light
molecular
quantum
reflection
scattering;
semiconductor
semiconductors;
structure;
surface
topography;
III-V
arsenide;
beam
compounds;
diffraction;
dots;
electron
energy
epitaxial
gallium
growth
growth;
high
indium
layers;
light
molecular
quantum
reflection
scattering;
semiconductor
semiconductors;
structure;
surface
topography;
(0)
URL
DOI
TeX
Tracing the two- to three-dimensional transition in the InAs/GaAs001 heteroepitaxial growth
F. Patella
,
S. Nufris
,
F. Arciprete
,
M. Fanfoni
,
E. Placidi
,
A. Sgarlata
, and
A. Balzarotti
.
Phys.~Rev.~B
67(20):205308
(
2003
)
F. Patella
,
S. Nufris
,
F. Arciprete
,
M. Fanfoni
,
E. Placidi
,
A. Sgarlata
, and
A. Balzarotti
.
Phys.~Rev.~B
67(20):205308
(
2003
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
atomic
compounds;
dots;
force
gallium
growth;
indium
microscopy;
quantum
scanning
self-assembly
semiconductor
semiconductors;
tunnelling
III-V
arsenide;
atomic
compounds;
dots;
force
gallium
growth;
indium
microscopy;
quantum
scanning
self-assembly
semiconductor
semiconductors;
tunnelling
(0)
URL
DOI
TeX
Enhancing the in-plane spatial ordering of quantum dots
W. Q. Ma
,
M. L. Hussein
,
J. L. Shultz
,
G. J. Salamo
,
T. D. Mishima
, and
M. B. Johnson
.
Phys.~Rev.~B
69(23):233312
(
2004
)
W. Q. Ma
,
M. L. Hussein
,
J. L. Shultz
,
G. J. Salamo
,
T. D. Mishima
, and
M. B. Johnson
.
Phys.~Rev.~B
69(23):233312
(
2004
)
4 years and 3 months ago
by
bronckobuster
1
III-V
X-ray
arsenide;
atomic
compounds;
diffraction
diffusion;
dots;
electron
force
gallium
indium
island
microscopy;
quantum
semiconductor
semiconductors;
structure;
surface
transmission
III-V
X-ray
arsenide;
atomic
compounds;
diffraction
diffusion;
dots;
electron
force
gallium
indium
island
microscopy;
quantum
semiconductor
semiconductors;
structure;
surface
transmission
(0)
URL
DOI
TeX
Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots
B. Lita
,
R. S. Goldman
,
J. D. Phillips
, and
P. K. Bhattacharya
.
Appl.~Phys.~Lett.
74(19):2824--2826
(
1999
)
B. Lita
,
R. S. Goldman
,
J. D. Phillips
, and
P. K. Bhattacharya
.
Appl.~Phys.~Lett.
74(19):2824--2826
(
1999
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
beam
compounds;
dots;
epitaxial
gallium
growth
indium
microscopy;
molecular
quantum
scanning
self-assembly;
semiconductor
semiconductors;
tunnelling
III-V
arsenide;
beam
compounds;
dots;
epitaxial
gallium
growth
indium
microscopy;
molecular
quantum
scanning
self-assembly;
semiconductor
semiconductors;
tunnelling
(0)
URL
DOI
TeX
Ordering of quantum dot molecules by self-organization
T. van Lippen
,
R. Notzel
, and
J. H. Wolter
.
J.~Vac.~Sci.~Technol.~B
23(4):1693--1699
(
2005
)
T. van Lippen
,
R. Notzel
, and
J. H. Wolter
.
J.~Vac.~Sci.~Technol.~B
23(4):1693--1699
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
III-V
X-ray
arsenide;
atomic
beam
compounds;
diffraction;
dots;
epitaxial
force
gallium
growth;
indium
internal
microscopy;
molecular
photoluminescence
quantum
self-assembly;
semiconductor
semiconductors;
stresses;
superlattices;
III-V
X-ray
arsenide;
atomic
beam
compounds;
diffraction;
dots;
epitaxial
force
gallium
growth;
indium
internal
microscopy;
molecular
photoluminescence
quantum
self-assembly;
semiconductor
semiconductors;
stresses;
superlattices;
(0)
URL
DOI
TeX
Adatom condensation and quantum dot sizes in InGaAs/GaAs 001
R. Leon
,
J. Wellman
,
X. Z. Liao
,
J. Zou
, and
D. J. H. Cockayne
.
Appl.~Phys.~Lett.
76(12):1558--1560
(
2000
)
R. Leon
,
J. Wellman
,
X. Z. Liao
,
J. Zou
, and
D. J. H. Cockayne
.
Appl.~Phys.~Lett.
76(12):1558--1560
(
2000
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
compounds;
condensation;
diffusion
dots;
electron
gallium
growth;
indium
island
materials;
microscopy;
nanostructured
nanotechnology;
probe
quantum
scanning
semiconductor
semiconductors;
structure;
surface
transmission
III-V
arsenide;
compounds;
condensation;
diffusion
dots;
electron
gallium
growth;
indium
island
materials;
microscopy;
nanostructured
nanotechnology;
probe
quantum
scanning
semiconductor
semiconductors;
structure;
surface
transmission
(0)
URL
DOI
TeX
Scaling behavior in InAs/GaAs001 quantum-dot formation
T. J. Krzyzewski
,
P. B. Joyce
,
G. R. Bell
, and
T. S. Jones
.
Phys.~Rev.~B
66(20):201302
(
2002
)
T. J. Krzyzewski
,
P. B. Joyce
,
G. R. Bell
, and
T. S. Jones
.
Phys.~Rev.~B
66(20):201302
(
2002
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
beam
compounds;
dots;
epitaxial
gallium
growth;
indium
internal
microscopy;
molecular
nucleation;
quantum
scanning
semiconductor
semiconductors;
stresses
tunnelling
III-V
arsenide;
beam
compounds;
dots;
epitaxial
gallium
growth;
indium
internal
microscopy;
molecular
nucleation;
quantum
scanning
semiconductor
semiconductors;
stresses
tunnelling
(0)
URL
DOI
TeX
Shape, strain, and ordering of lateral InAs quantum dot molecules
B. Krause
,
T. H. Metzger
,
A. Rastelli
,
R. Songmuang
,
S. Kiravittaya
, and
O. G. Schmidt
.
Phys.~Rev.~B
72(8):085339
(
2005
)
B. Krause
,
T. H. Metzger
,
A. Rastelli
,
R. Songmuang
,
S. Kiravittaya
, and
O. G. Schmidt
.
Phys.~Rev.~B
72(8):085339
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
III-V
X-ray
arsenide;
beam
compounds;
constants;
diffraction;
dots;
epitaxial
gallium
growth;
indium
lattice
molecular
photoluminescence;
quantum
scattering
self-assembly;
semiconductor
semiconductors;
III-V
X-ray
arsenide;
beam
compounds;
constants;
diffraction;
dots;
epitaxial
gallium
growth;
indium
lattice
molecular
photoluminescence;
quantum
scattering
self-assembly;
semiconductor
semiconductors;
(0)
URL
DOI
TeX
Morphology Response to Strain Field Interferences in Stacks of Highly Ordered Quantum Dot Arrays
H. Heidemeyer
,
U. Denker
,
C. Müller
, and
O. G. Schmidt
.
Phys.~Rev.~Lett.
91(19):196103
(
2003
)
H. Heidemeyer
,
U. Denker
,
C. Müller
, and
O. G. Schmidt
.
Phys.~Rev.~Lett.
91(19):196103
(
2003
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
compounds;
dots;
gallium
indium
interface
morphology;
quantum
semiconductor
semiconductors;
structure
surface
III-V
arsenide;
compounds;
dots;
gallium
indium
interface
morphology;
quantum
semiconductor
semiconductors;
structure
surface
(0)
URL
DOI
TeX
High-gain excitonic lasing from a single InAs monolayer in bulk GaAs
A. R. Goni
,
M. Stroh
,
C. Thomsen
,
F. Heinrichsdorff
,
V. Turck
,
A. Krost
, and
D. Bimberg
.
Appl.~Phys.~Lett.
72(12):1433--1435
(
1998
)
A. R. Goni
,
M. Stroh
,
C. Thomsen
,
F. Heinrichsdorff
,
V. Turck
,
A. Krost
, and
D. Bimberg
.
Appl.~Phys.~Lett.
72(12):1433--1435
(
1998
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
cathodoluminescence;
compounds;
dots
excitons;
gallium
indium
inversion;
lasers;
optical
population
pumping;
quantum
semiconductor
semiconductors;
III-V
arsenide;
cathodoluminescence;
compounds;
dots
excitons;
gallium
indium
inversion;
lasers;
optical
population
pumping;
quantum
semiconductor
semiconductors;
(0)
URL
DOI
TeX
Cap layer induced stress in InAs/AlGaAs quantum dots
S. D. Chen
,
Y. Y. Chen
, and
S. C. Lee
.
J.~Vac.~Sci.~Technol.~B
23(5):2132--2136
(
2005
)
S. D. Chen
,
Y. Y. Chen
, and
S. C. Lee
.
J.~Vac.~Sci.~Technol.~B
23(5):2132--2136
(
2005
)
4 years and 3 months ago
by
bronckobuster
1
III-V
aluminium
arsenide;
compounds;
dots;
gallium
indium
internal
line
photoluminescence;
quantum
semiconductor
semiconductors;
shift;
spectral
stresses
III-V
aluminium
arsenide;
compounds;
dots;
gallium
indium
internal
line
photoluminescence;
quantum
semiconductor
semiconductors;
shift;
spectral
stresses
(0)
URL
DOI
TeX
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