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+
quantum
+
semiconductor
+
semiconductors;
+
iii-v
+
compounds;
+
indium
+
gallium
+
arsenide;
+
growth;
+
epitaxial
+
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island
+
self-assembly;
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beam
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internal
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molecular
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scanning
concepts
tags
imported
semiconductor
quantum
optical
nonlinear
laser
dots;
III-V
semiconductors;
chaos;
lasers,
compounds;
gallium
systems;
dynamical
indium
lasers;
synchronisation;
structure;
epitaxial
synchronisation
arsenide;
feedback
island
growth;
surface
oscillators;
distributed
amplifiers,
feedback;
phase
lasers
theory;
wave
systems
theory,
microscopy;
bifurcation;
device
pulse
stability,
dynamics,
high-speed
carrier
spatiotemporal
phenomena;
light
beam
layers;
gain
No matching items.
Effect of uniaxial stress on the polarization of light emitted from GaN/AlN quantum dots grown on Si111
O. Moshe
,
D. H. Rich
,
B. Damilano
, and
J. Massies
.
Phys.~Rev.~B
77(15):155322
(
2008
)
O. Moshe
,
D. H. Rich
,
B. Damilano
, and
J. Massies
.
Phys.~Rev.~B
77(15):155322
(
2008
)
4 years and 4 months ago
by
bronckobuster
1
III-V
aluminium
band
cathodoluminescence;
compounds;
dots;
elongation;
excitons;
expansion;
functions;
gallium
gap
ground
light
microcracks;
oscillator
polarisation;
quantum
semiconductor
semiconductors
semiconductors;
states;
strength;
strengths;
tensile
thermal
wave
wide
III-V
aluminium
band
cathodoluminescence;
compounds;
dots;
elongation;
excitons;
expansion;
functions;
gallium
gap
ground
light
microcracks;
oscillator
polarisation;
quantum
semiconductor
semiconductors
semiconductors;
states;
strength;
strengths;
tensile
thermal
wave
wide
(0)
URL
DOI
TeX
Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory
R. Bardoux
,
T. Guillet
,
B. Gil
,
P. Lefebvre
,
T. Bretagnon
,
T. Taliercio
,
S. Rousset
, and
F. Semond
.
Phys.~Rev.~B
77(23):235315
(
2008
)
R. Bardoux
,
T. Guillet
,
B. Gil
,
P. Lefebvre
,
T. Bretagnon
,
T. Taliercio
,
S. Rousset
, and
F. Semond
.
Phys.~Rev.~B
77(23):235315
(
2008
)
4 years and 4 months ago
by
bronckobuster
1
(electron);
III-V
aluminium
bands
beam
compounds;
dots;
epitaxial
exchange
excitons;
gallium
growth;
interactions
molecular
photoluminescence;
polarisation;
quantum
semiconductor
semiconductors;
valence
(electron);
III-V
aluminium
bands
beam
compounds;
dots;
epitaxial
exchange
excitons;
gallium
growth;
interactions
molecular
photoluminescence;
polarisation;
quantum
semiconductor
semiconductors;
valence
(0)
URL
DOI
TeX
Multi-excitonic complexes in single InGaN quantum dots
R. Seguin
,
S. Rodt
,
A. Strittmatter
,
L. Reißmann
,
T. Bartel
,
A. Hoffmann
,
D. Bimberg
,
E. Hahn
, and
D. Gerthsen
.
Appl. Phys. Lett.
84(20):4023--4025
(
2004
)
R. Seguin
,
S. Rodt
,
A. Strittmatter
,
L. Reißmann
,
T. Bartel
,
A. Hoffmann
,
D. Bimberg
,
E. Hahn
, and
D. Gerthsen
.
Appl. Phys. Lett.
84(20):4023--4025
(
2004
)
4 years and 4 months ago
by
bronckobuster
1
III-V
MOCVD
biexcitons
cathodoluminescence;
coatings;
compounds;
dots;
excitons;
gallium
indium
nitrogen
quantum
semiconductor
semiconductors;
III-V
MOCVD
biexcitons
cathodoluminescence;
coatings;
compounds;
dots;
excitons;
gallium
indium
nitrogen
quantum
semiconductor
semiconductors;
(0)
URL
DOI
TeX
Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
M. Winkelnkemper
,
R. Seguin
,
S. Rodt
,
A. Schliwa
,
L. Reißmann
,
A. Strittmatter
,
A. Hoffmann
, and
D. Bimberg
.
J. Appl. Phys.
101(11):113708
(
2007
)
M. Winkelnkemper
,
R. Seguin
,
S. Rodt
,
A. Schliwa
,
L. Reißmann
,
A. Strittmatter
,
A. Hoffmann
, and
D. Bimberg
.
J. Appl. Phys.
101(11):113708
(
2007
)
4 years and 4 months ago
by
bronckobuster
1
III-V
bands
calculations;
cathodoluminescence;
compounds;
dots;
excitons;
gallium
indium
k.p
quantum
semiconductor
semiconductors;
valence
III-V
bands
calculations;
cathodoluminescence;
compounds;
dots;
excitons;
gallium
indium
k.p
quantum
semiconductor
semiconductors;
valence
(0)
URL
DOI
TeX
Quantum dot amplifiers with high output power and low noise
T. W. Berg
, and
J. Mørk
.
Appl.~Phys.~Lett.
82(18):3083--3085
(
2003
)
T. W. Berg
, and
J. Mørk
.
Appl.~Phys.~Lett.
82(18):3083--3085
(
2003
)
4 years and 4 months ago
by
bronckobuster
1
amplifiers;
device
dots;
models
noise;
optical
quantum
semiconductor
amplifiers;
device
dots;
models
noise;
optical
quantum
semiconductor
(0)
URL
DOI
TeX
Coulomb scattering in nitride-based self-assembled quantum dot systems
T. R. Nielsen
,
P. Gartner
,
M. Lorke
,
J. Seebeck
, and
F. Jahnke
.
Phys.~Rev.~B
72(23):235311
(
2005
)
T. R. Nielsen
,
P. Gartner
,
M. Lorke
,
J. Seebeck
, and
F. Jahnke
.
Phys.~Rev.~B
72(23):235311
(
2005
)
4 years and 4 months ago
by
bronckobuster
1
III-V
Stark
confined
dots;
effect;
many-body
problems;
quantum
renormalisation
self-assembly;
semiconductor
semiconductors;
III-V
Stark
confined
dots;
effect;
many-body
problems;
quantum
renormalisation
self-assembly;
semiconductor
semiconductors;
(0)
URL
DOI
TeX
Polarons in semiconductor quantum dots and their role in the quantum kinetics of carrier relaxation
J. Seebeck
,
T. R. Nielsen
,
P. Gartner
, and
F. Jahnke
.
Phys. Rev. B
71(12):125327
(
2005
)
J. Seebeck
,
T. R. Nielsen
,
P. Gartner
, and
F. Jahnke
.
Phys. Rev. B
71(12):125327
(
2005
)
4 years and 4 months ago
by
bronckobuster
1
dots;
electron-phonon
interactions;
localised
polarons;
quantum
semiconductor
states
dots;
electron-phonon
interactions;
localised
polarons;
quantum
semiconductor
states
(0)
URL
DOI
TeX
Relaxation properties of the quantum kinetics of carrier--LO-phonon interaction in quantum wells and quantum dots
P. Gartner
,
J. Seebeck
, and
F. Jahnke
.
Phys. Rev. B
73(11):115307-1--115307-6
(
2006
)
P. Gartner
,
J. Seebeck
, and
F. Jahnke
.
Phys. Rev. B
73(11):115307-1--115307-6
(
2006
)
4 years and 4 months ago
by
bronckobuster
1
Green's
dots;
function
methods
phonons;
quantum
semiconductor
wells;
Green's
dots;
function
methods
phonons;
quantum
semiconductor
wells;
(0)
URL
DOI
TeX
Anomaly in the excitation dependence of the optical gain of semiconductor quantum dots
M. Lorke
,
W. W. Chow
,
T. R. Nielsen
,
J. Seebeck
,
P. Gartner
, and
F. Jahnke
.
Phys. Rev. B
74(3):035334-1--035334-4
(
2006
)
M. Lorke
,
W. W. Chow
,
T. R. Nielsen
,
J. Seebeck
,
P. Gartner
, and
F. Jahnke
.
Phys. Rev. B
74(3):035334-1--035334-4
(
2006
)
4 years and 4 months ago
by
bronckobuster
1
dots;
electron-phonon
interactions;
quantum
quasiparticles
semiconductor
dots;
electron-phonon
interactions;
quantum
quasiparticles
semiconductor
(0)
URL
DOI
TeX
Collisional broadening and shift of spectral lines in quantum dot lasers
A. V. Uskov
,
K. Nishi
, and
R. Lang
.
Appl.~Phys.~Lett.
74(21):3081--3083
(
1999
)
A. V. Uskov
,
K. Nishi
, and
R. Lang
.
Appl.~Phys.~Lett.
74(21):3081--3083
(
1999
)
4 years and 4 months ago
by
bronckobuster
1
broadening;
carrier
density;
dots;
laser
lasers;
line
quantum
relaxation
self-assembly
semiconductor
shift;
spectral
time;
transitions;
well
broadening;
carrier
density;
dots;
laser
lasers;
line
quantum
relaxation
self-assembly
semiconductor
shift;
spectral
time;
transitions;
well
(0)
URL
DOI
TeX
Effect of phonon bottleneck on quantum-dot laser performance
M. Sugawara
,
K. Mukai
, and
H. Shoji
.
Appl.~Phys.~Lett.
71(19):2791--2793
(
1997
)
M. Sugawara
,
K. Mukai
, and
H. Shoji
.
Appl.~Phys.~Lett.
71(19):2791--2793
(
1997
)
4 years and 4 months ago
by
bronckobuster
1
III-V
arsenide;
carrier
compounds;
dots;
gallium
ground
indium
lasers;
lifetime
phonons;
quantum
semiconductor
semiconductors;
states;
III-V
arsenide;
carrier
compounds;
dots;
gallium
ground
indium
lasers;
lifetime
phonons;
quantum
semiconductor
semiconductors;
states;
(0)
URL
DOI
TeX
Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: Quantum efficiency and nonlinear gain
A. V. Uskov
,
Y. Boucher
,
J. Le Bihan
, and
J. McInerney
.
Appl.~Phys.~Lett.
73(11):1499--1501
(
1998
)
A. V. Uskov
,
Y. Boucher
,
J. Le Bihan
, and
J. McInerney
.
Appl.~Phys.~Lett.
73(11):1499--1501
(
1998
)
4 years and 4 months ago
by
bronckobuster
1
Auger
burning;
dots;
effect;
hole
laser
lasers;
optical
quantum
semiconductor
theory
well
Auger
burning;
dots;
effect;
hole
laser
lasers;
optical
quantum
semiconductor
theory
well
(0)
URL
DOI
TeX
Strain status of self-assembled InAs quantum dots
K. Zhang
,
Ch. Heyn
,
W. Hansen
,
Th. Schmidt
, and
J. Falta
.
Appl.~Phys.~Lett.
77(9):1295--1297
(
2000
)
K. Zhang
,
Ch. Heyn
,
W. Hansen
,
Th. Schmidt
, and
J. Falta
.
Appl.~Phys.~Lett.
77(9):1295--1297
(
2000
)
4 years and 4 months ago
by
bronckobuster
1
III-V
X-ray
chemical
compounds;
diffraction;
dots;
indium
interdiffusion;
internal
quantum
relaxation;
self-assembly;
semiconductor
semiconductors
stress
stresses;
III-V
X-ray
chemical
compounds;
diffraction;
dots;
indium
interdiffusion;
internal
quantum
relaxation;
self-assembly;
semiconductor
semiconductors
stress
stresses;
(0)
URL
DOI
TeX
Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green's Function Approach
B. Yang
, and
E. Pan
.
J.~App.~Mech.
70(2):161--168
(
2003
)
B. Yang
, and
E. Pan
.
J.~App.~Mech.
70(2):161--168
(
2003
)
4 years and 4 months ago
by
bronckobuster
1
Green's
dots;
function
methods
quantum
semiconductor
Green's
dots;
function
methods
quantum
semiconductor
(0)
URL
DOI
TeX
Shape transition of InAs quantum dots on GaAs001
M. C. Xu
,
Y. Temko
,
T. Suzuki
, and
K. Jacobi
.
J.~Appl.~Phys.
98(8):083525
(
2005
)
M. C. Xu
,
Y. Temko
,
T. Suzuki
, and
K. Jacobi
.
J.~Appl.~Phys.
98(8):083525
(
2005
)
4 years and 4 months ago
by
bronckobuster
1
III-V
beam
compounds;
crystal
dots;
epitaxial
faces
growth;
indium
microscopy;
molecular
quantum
scanning
semiconductor
semiconductors;
tunnelling
III-V
beam
compounds;
crystal
dots;
epitaxial
faces
growth;
indium
microscopy;
molecular
quantum
scanning
semiconductor
semiconductors;
tunnelling
(0)
URL
DOI
TeX
Spatial ordering of quantum dots in microdisks
Z. G. Xie
, and
G. S. Solomon
.
Appl.~Phys.~Lett.
87(9):093106
(
2005
)
Z. G. Xie
, and
G. S. Solomon
.
Appl.~Phys.~Lett.
87(9):093106
(
2005
)
4 years and 4 months ago
by
bronckobuster
1
III-V
adsorbed
arsenide;
compounds;
diffusion
dots;
gallium
growth;
indium
layers;
materials;
microcavities;
optical
photoluminescence;
quantum
semiconductor
semiconductors;
surface
III-V
adsorbed
arsenide;
compounds;
diffusion
dots;
gallium
growth;
indium
layers;
materials;
microcavities;
optical
photoluminescence;
quantum
semiconductor
semiconductors;
surface
(0)
URL
DOI
TeX
Spatial correlation-anticorrelation in strain-driven self-assembled InGaAs quantum dots
X. D. Wang
,
N. Liu
,
C. K. Shih
,
S. Govindaraju
, and
A. L. Holmes
.
Appl.~Phys.~Lett.
85(8):1356--1358
(
2004
)
X. D. Wang
,
N. Liu
,
C. K. Shih
,
S. Govindaraju
, and
A. L. Holmes
.
Appl.~Phys.~Lett.
85(8):1356--1358
(
2004
)
4 years and 4 months ago
by
bronckobuster
1
III-V
arsenide;
atomic
compounds;
dots;
force
gallium
indium
internal
microscopy;
quantum
scanning
self-assembly;
semiconductor
semiconductors;
stresses
tunnelling
III-V
arsenide;
atomic
compounds;
dots;
force
gallium
indium
internal
microscopy;
quantum
scanning
self-assembly;
semiconductor
semiconductors;
stresses
tunnelling
(0)
URL
DOI
TeX
Size, shape, and stability of InAs quantum dots on the GaAs001 substrate
L. G. Wang
,
P. Kratzer
,
N. Moll
, and
M. Scheffler
.
Phys.~Rev.~B
62(3):1897--1904
(
2000
)
L. G. Wang
,
P. Kratzer
,
N. Moll
, and
M. Scheffler
.
Phys.~Rev.~B
62(3):1897--1904
(
2000
)
4 years and 4 months ago
by
bronckobuster
1
III-V
arsenide;
compounds;
dots;
epitaxial
gallium
growth;
indium
island
layers;
quantum
self-assembly
semiconductor
semiconductors;
structure;
III-V
arsenide;
compounds;
dots;
epitaxial
gallium
growth;
indium
island
layers;
quantum
self-assembly
semiconductor
semiconductors;
structure;
(0)
URL
DOI
TeX
Shape and Composition Map of a Prepyramid Quantum Dot
B. J. Spencer
, and
M. Blanariu
.
Phys.~Rev.~Lett.
95(20):206101
(
2005
)
B. J. Spencer
, and
M. Blanariu
.
Phys.~Rev.~Lett.
95(20):206101
(
2005
)
4 years and 4 months ago
by
bronckobuster
1
Ge-Si
III-V
alloys;
arsenide;
compounds;
diffusion;
dots;
elemental
epitaxial
gallium
indium
island
layers
quantum
segregation;
semiconductor
semiconductors;
silicon;
structure;
surface
Ge-Si
III-V
alloys;
arsenide;
compounds;
diffusion;
dots;
elemental
epitaxial
gallium
indium
island
layers
quantum
segregation;
semiconductor
semiconductors;
silicon;
structure;
surface
(0)
URL
DOI
TeX
Single Photon Detection with a Quantum Dot Transistor
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
M. L. Leadbeater
,
N. K. Patel
,
R. A. Hogg
,
C. E. Norman
,
N. J. Curson
, and
M. Pepper
.
Jpn.~J.~Appl.~Phys.
(
2001
)
A. J. Shields
,
M. P. O'Sullivan
,
I. Farrer
,
D. A. Ritchie
,
M. L. Leadbeater
,
N. K. Patel
,
R. A. Hogg
,
C. E. Norman
,
N. J. Curson
, and
M. Pepper
.
Jpn.~J.~Appl.~Phys.
(
2001
)
4 years and 4 months ago
by
bronckobuster
1
III-V
aluminium
arsenide;
compounds
criticality;
dots;
effect
field
gallium
quantum
self-organised
semiconductor
semiconductors;
transistors;
III-V
aluminium
arsenide;
compounds
criticality;
dots;
effect
field
gallium
quantum
self-organised
semiconductor
semiconductors;
transistors;
(0)
URL
DOI
TeX
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