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No matching items.
Adatom condensation and quantum dot sizes in InGaAs/GaAs 001
R. Leon
,
J. Wellman
,
X. Z. Liao
,
J. Zou
, and
D. J. H. Cockayne
.
Appl.~Phys.~Lett.
76(12):1558--1560
(
2000
)
R. Leon
,
J. Wellman
,
X. Z. Liao
,
J. Zou
, and
D. J. H. Cockayne
.
Appl.~Phys.~Lett.
76(12):1558--1560
(
2000
)
4 years and 3 months ago
by
bronckobuster
1
III-V
arsenide;
compounds;
condensation;
diffusion
dots;
electron
gallium
growth;
indium
island
materials;
microscopy;
nanostructured
nanotechnology;
probe
quantum
scanning
semiconductor
semiconductors;
structure;
surface
transmission
III-V
arsenide;
compounds;
condensation;
diffusion
dots;
electron
gallium
growth;
indium
island
materials;
microscopy;
nanostructured
nanotechnology;
probe
quantum
scanning
semiconductor
semiconductors;
structure;
surface
transmission
(0)
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