%0 Journal Article %1 ADMA:ADMA201706573 %A Jun, Taehwan %A Kim, Junghwan %A Sasase, Masato %A Hosono, Hideo %D 2018 %J Advanced Materials %K semiconductor transperant %P n/a--n/a %R 10.1002/adma.201706573 %T Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I %U http://dx.doi.org/10.1002/adma.201706573 %X Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm2 V−1 s−1 is obtained, which is comparable with that of conventional n-type TAS.

@article{ADMA:ADMA201706573, abstract = {Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm2 V−1 s−1 is obtained, which is comparable with that of conventional n-type TAS.}, added-at = {2018-01-31T11:44:12.000+0100}, author = {Jun, Taehwan and Kim, Junghwan and Sasase, Masato and Hosono, Hideo}, biburl = {https://www.bibsonomy.org/bibtex/278493d3f6242186ed3bf49c2a77a5e2e/tammireddy}, description = {Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I - Jun - 2018 - Advanced Materials - Wiley Online Library}, doi = {10.1002/adma.201706573}, interhash = {1037c539413d360e0f6352c4338d7f8d}, intrahash = {78493d3f6242186ed3bf49c2a77a5e2e}, issn = {1521-4095}, journal = {Advanced Materials}, keywords = {semiconductor transperant}, pages = {n/a--n/a}, timestamp = {2018-01-31T11:44:12.000+0100}, title = {Material Design of p-Type Transparent Amorphous Semiconductor, Cu–Sn–I}, url = {http://dx.doi.org/10.1002/adma.201706573}, year = 2018 }