%0 Journal Article %1 journals/chinaf/ZhaoZZFLSYLLXH23 %A Zhao, Sheng-Lei %A Zhang, Jincheng %A Zhang, Yachao %A Feng, Lansheng %A Liu, Shuang %A Song, Xiufeng %A Yao, Yixin %A Luo, Jun %A Liu, Zhihong %A Xu, Shengrui %A Hao, Yue %D 2023 %J Sci. China Inf. Sci. %K dblp %N 2 %T 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate. %U http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#ZhaoZZFLSYLLXH23 %V 66

@article{journals/chinaf/ZhaoZZFLSYLLXH23, added-at = {2023-03-02T00:00:00.000+0100}, author = {Zhao, Sheng-Lei and Zhang, Jincheng and Zhang, Yachao and Feng, Lansheng and Liu, Shuang and Song, Xiufeng and Yao, Yixin and Luo, Jun and Liu, Zhihong and Xu, Shengrui and Hao, Yue}, biburl = {https://www.bibsonomy.org/bibtex/2c0feb30ffb4a74282a64dab44588fa97/dblp}, ee = {https://doi.org/10.1007/s11432-022-3475-9}, interhash = {30fc7240444c295b55f6e24e72d0793d}, intrahash = {c0feb30ffb4a74282a64dab44588fa97}, journal = {Sci. China Inf. Sci.}, keywords = {dblp}, month = {February}, number = 2, timestamp = {2024-04-08T20:26:21.000+0200}, title = {1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate.}, url = {http://dblp.uni-trier.de/db/journals/chinaf/chinaf66.html#ZhaoZZFLSYLLXH23}, volume = 66, year = 2023 }