High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.
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%0 Conference Paper
%1 conf/vlsit/HanSBGKZ23
%A Han, Yi
%A Sun, Jingxuan
%A Bae, Jin Hee
%A Grützmacher, Detlev
%A Knoch, Joachim
%A Zhao, Qing-Tai
%B VLSI Technology and Circuits
%D 2023
%I IEEE
%K dblp
%P 1-2
%T High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.
%U http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#HanSBGKZ23
%@ 978-4-86348-806-9
@inproceedings{conf/vlsit/HanSBGKZ23,
added-at = {2023-07-28T00:00:00.000+0200},
author = {Han, Yi and Sun, Jingxuan and Bae, Jin Hee and Grützmacher, Detlev and Knoch, Joachim and Zhao, Qing-Tai},
biburl = {https://www.bibsonomy.org/bibtex/218424f11dccb2ba11510f7220220151e/dblp},
booktitle = {VLSI Technology and Circuits},
crossref = {conf/vlsit/2023},
ee = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185373},
interhash = {74158a72f47d1146e24cb751e3d0b2c4},
intrahash = {18424f11dccb2ba11510f7220220151e},
isbn = {978-4-86348-806-9},
keywords = {dblp},
pages = {1-2},
publisher = {IEEE},
timestamp = {2024-04-09T19:13:01.000+0200},
title = {High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.},
url = {http://dblp.uni-trier.de/db/conf/vlsit/vlsit2023.html#HanSBGKZ23},
year = 2023
}
