Artikel,
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.
J. Kim, C. Oh, H. Lee, D. Lee, H. Hwang, S. Hwang, B. Na, J. Moon, J. Kim, H. Park, J. Ryu, K. Park, S. Kang, S. Kim, H. Kim, J. Bang, H. Cho, M. Jang, C. Han, J. Lee, J. Choi, und Y. Jun.IEEE J. Solid State Circuits, 47 (1): 107-116 (2012)
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- BibTeX-Schlüssel
- journals/jssc/KimOLLHHNMKPRPKKKBCJHLCJ12
- Eintragstyp
- article
- Jahr
- 2012
- Zeitschrift
- IEEE J. Solid State Circuits
- Nummer
- 1
- Seiten
- 107-116
- Band
- 47
- ee
- https://doi.org/10.1109/JSSC.2011.2164731
- URL
- http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#KimOLLHHNMKPRPKKKBCJHLCJ12
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%1 journals/jssc/KimOLLHHNMKPRPKKKBCJHLCJ12
%A Kim, Jung-Sik
%A Oh, Chi Sung
%A Lee, Hocheol
%A Lee, Donghyuk
%A Hwang, Hyong-Ryol
%A Hwang, Sooman
%A Na, Byongwook
%A Moon, Joungwook
%A Kim, Jin-Guk
%A Park, Hanna
%A Ryu, Jang-Woo
%A Park, Kiwon
%A Kang, Sang-Kyu
%A Kim, So-Young
%A Kim, Hoyoung
%A Bang, Jong-Min
%A Cho, Hyunyoon
%A Jang, Minsoo
%A Han, Cheolmin
%A Lee, Jung-Bae
%A Choi, Joo-Sun
%A Jun, Young-Hyun
%D 2012
%J IEEE J. Solid State Circuits
%K dblp
%N 1
%P 107-116
%T A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.
%U http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#KimOLLHHNMKPRPKKKBCJHLCJ12
%V 47
@article{journals/jssc/KimOLLHHNMKPRPKKKBCJHLCJ12,
added-at = {2020-08-30T00:00:00.000+0200},
author = {Kim, Jung-Sik and Oh, Chi Sung and Lee, Hocheol and Lee, Donghyuk and Hwang, Hyong-Ryol and Hwang, Sooman and Na, Byongwook and Moon, Joungwook and Kim, Jin-Guk and Park, Hanna and Ryu, Jang-Woo and Park, Kiwon and Kang, Sang-Kyu and Kim, So-Young and Kim, Hoyoung and Bang, Jong-Min and Cho, Hyunyoon and Jang, Minsoo and Han, Cheolmin and Lee, Jung-Bae and Choi, Joo-Sun and Jun, Young-Hyun},
biburl = {https://www.bibsonomy.org/bibtex/287980ad0164aee7474fa2755df85ee3f/dblp},
ee = {https://doi.org/10.1109/JSSC.2011.2164731},
interhash = {f9c77e6826093c9241dc05510140b41c},
intrahash = {87980ad0164aee7474fa2755df85ee3f},
journal = {IEEE J. Solid State Circuits},
keywords = {dblp},
number = 1,
pages = {107-116},
timestamp = {2020-08-31T11:42:10.000+0200},
title = {A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.},
url = {http://dblp.uni-trier.de/db/journals/jssc/jssc47.html#KimOLLHHNMKPRPKKKBCJHLCJ12},
volume = 47,
year = 2012
}