Reversible doping and fine-tuning of the Dirac point position in the topological crystalline insulator Pb$_1−x$Sn$_x$Se via sputtering and annealing process
Nanoscale Adv., 7 (7):
1885-1891 (Feb 10, 2025)DOI: 10.1039/D4NA00821A
Abstract
In this study, we utilize scanning tunneling microscopy and spectroscopy to detail a sputter- and annealing methodology for preparing atomically clean Pb1−xSnxSe(001) surfaces. We examine the impact these processes have on the surface quality, the composition, and the electronic properties. Our findings demonstrate that annealing temperatures between 250 °C and 280 °C produce smooth surfaces while maintaining the topological properties of Pb1−xSnxSe. Fine control of the annealing temperature also allows for a reversible tuning of the doping level, enabling a positive or negative shift of the Dirac point energy with respect to the Fermi level. Our results highlight the effectiveness of these cleaning methods and demonstrate their potential for future research and applications in topological crystalline insulator materials.
Description
Reversible doping and fine-tuning of the Dirac point position in the topological crystalline insulator Pb1−xSnxSe via sputtering and annealing process - Nanoscale Advances (RSC Publishing)