%0 Journal Article %1 noauthororeditor %A Pankratov, E.L. %A Bulaeva, E.A. %D 2015 %J International Journal of Recent Advances in Physics (IJRAP) %K Field-effect analytical construction heterotransistors increasing integration manufacturing modelling of optimization process rate simplification technological transistors %N 1 %P 12 %R https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf %T Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors %U https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf %V 4 %X In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions.

@article{noauthororeditor, abstract = {In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach based on manufacturing field-effect transistors in heterostructures and optimization of technological processes. At the same time we consider possibility to simplify their constructions. }, added-at = {2018-07-26T04:41:44.000+0200}, author = {Pankratov, E.L. and Bulaeva, E.A.}, biburl = {https://www.bibsonomy.org/bibtex/2342d9f150a1f651324e9c832020e1849/johnkenadi1985}, doi = {https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf}, interhash = {24d971a82ec95f45de71a07b95160fe4}, intrahash = {342d9f150a1f651324e9c832020e1849}, issn = {2201-1056}, journal = {International Journal of Recent Advances in Physics (IJRAP) }, keywords = {Field-effect analytical construction heterotransistors increasing integration manufacturing modelling of optimization process rate simplification technological transistors}, language = {English}, month = {February}, number = 1, pages = 12, timestamp = {2018-07-26T04:41:44.000+0200}, title = {Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors}, url = {https://wireilla.com/physics/ijrap/papers/4115ijrap03.pdf}, volume = 4, year = 2015 }