%0 Journal Article %1 :/content/aip/journal/apl/109/11/10.1063/1.4962827 %A Verma, Upkar K. %A Tripathi, Durgesh C. %A Mohapatra, Y. N. %D 2016 %J Applied Physics Letters %K Density P3HT PCBM States Traps capacitance characteristics of voltage %N 11 %R http://dx.doi.org/10.1063/1.4962827 %T Direct determination of defect density of states in organic bulk heterojunction solar cells %U http://scitation.aip.org/content/aip/journal/apl/109/11/10.1063/1.4962827 %V 109 %X The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.

@article{:/content/aip/journal/apl/109/11/10.1063/1.4962827, abstract = {The measurement of the occupied trap density of states (DOS) is important for optimization of organic bulk heterojunction solar cells. We demonstrate a direct method for obtaining it from the trap related peak in capacitance-voltage characteristics under different levels of illumination, and its correlation with the dark current density-voltage characteristics. We use the method to measure the parameters of DOS, occupied trap distribution, and its temperature dependence for poly(3-hexathiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM) based solar cells. The total occupied trap concentration is approximately 7 × 1015 cm−3 with a standard deviation for a truncated Gaussian distribution varying between 32 and 44 meV in the temperature range of 310–270 K within a total Gaussian DOS with a standard deviation of 92 meV.}, added-at = {2016-09-19T11:18:29.000+0200}, author = {Verma, Upkar K. and Tripathi, Durgesh C. and Mohapatra, Y. N.}, biburl = {https://www.bibsonomy.org/bibtex/26dce0fb5700840f196c3142a2ccfb393/danies}, description = {Direct determination of defect density of states in organic bulk heterojunction solar cells}, doi = {http://dx.doi.org/10.1063/1.4962827}, eid = {113301}, interhash = {4792aead0f7a00e713e350a8aa97f85f}, intrahash = {6dce0fb5700840f196c3142a2ccfb393}, journal = {Applied Physics Letters}, keywords = {Density P3HT PCBM States Traps capacitance characteristics of voltage}, number = 11, timestamp = {2016-09-19T11:18:29.000+0200}, title = {Direct determination of defect density of states in organic bulk heterojunction solar cells}, url = {http://scitation.aip.org/content/aip/journal/apl/109/11/10.1063/1.4962827}, volume = 109, year = 2016 }