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Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 247-251 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.
DOI: 10.1016/S0169-4332(01)00856-X

Abstract

The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra. (C) 2002 Elsevier Science B.V. All rights reserved.

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