The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW)
are calculated taking into account interface effects. Numerical results
obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be
responsible for a strong broadening of excitonic spectra. (C) 2002
Elsevier Science B.V. All rights reserved.
%0 Journal Article
%1 WOS:000176520700045
%A Maia, FF
%A Freire, JAK
%A Farias, GA
%A Freire, VN
%A da Silva, EF
%C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
%D 2002
%I ELSEVIER SCIENCE BV
%J APPLIED SURFACE SCIENCE
%K binding effects; energy; fluctuations; interface quantum well} {strain
%N 1-4
%P 247-251
%R 10.1016/S0169-4332(01)00856-X
%T Exciton energy broadening due to interface fluctuations in
ZnSe/ZnSxSe1-x strained quantum wells
%V 190
%X The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW)
are calculated taking into account interface effects. Numerical results
obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be
responsible for a strong broadening of excitonic spectra. (C) 2002
Elsevier Science B.V. All rights reserved.
@article{WOS:000176520700045,
abstract = {The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW)
are calculated taking into account interface effects. Numerical results
obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be
responsible for a strong broadening of excitonic spectra. (C) 2002
Elsevier Science B.V. All rights reserved.},
added-at = {2022-05-23T20:00:14.000+0200},
address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS},
author = {Maia, FF and Freire, JAK and Farias, GA and Freire, VN and da Silva, EF},
biburl = {https://www.bibsonomy.org/bibtex/2e1f150de0db23d8dbd665d8f5ad3fe99/ppgfis_ufc_br},
doi = {10.1016/S0169-4332(01)00856-X},
interhash = {94d9c4bc9cc3bd78fe1977efbdf8912c},
intrahash = {e1f150de0db23d8dbd665d8f5ad3fe99},
issn = {0169-4332},
journal = {APPLIED SURFACE SCIENCE},
keywords = {binding effects; energy; fluctuations; interface quantum well} {strain},
note = {8th International Conference on the Formation of Semiconductor
Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001},
number = {1-4},
organization = {Japan Soc Appl Phys; Hokkaido Univ, Res Ctr Integrated Quantum Electr;
Int Sci Exchange Program Minist Educ, Culture, Sports, Sci & Technol
Japan},
pages = {247-251},
publisher = {ELSEVIER SCIENCE BV},
pubstate = {published},
timestamp = {2022-05-23T20:00:14.000+0200},
title = {Exciton energy broadening due to interface fluctuations in
ZnSe/ZnSxSe1-x strained quantum wells},
tppubtype = {article},
volume = 190,
year = 2002
}