It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
%0 Journal Article
%1 pankratov2014optimization
%A Pankratov, E.L.
%D 2014
%J International Journal of Recent advances in Physics (IJRAP)
%K physics
%N 3
%P 1-16
%R 10.14810/ijrap.2014.3301
%T OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT
HETEROTRANSISTORS WITHOUT P-NJUNCTIONS
TO DECREASE THEIR DIMENSIONS
%U http://wireilla.com/physics/ijrap/index.html
%V 3
%X It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
@article{pankratov2014optimization,
abstract = {It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction.
Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact. },
added-at = {2018-03-22T06:48:09.000+0100},
author = {Pankratov, E.L.},
biburl = {https://www.bibsonomy.org/bibtex/2e9c8038fcacfda40beb131c43fe9b836/johnkenadi1985.},
doi = {10.14810/ijrap.2014.3301},
interhash = {0a6be5ecd27d568d335289f54f1dbd2b},
intrahash = {e9c8038fcacfda40beb131c43fe9b836},
journal = {International Journal of Recent advances in Physics (IJRAP)},
keywords = {physics},
month = {august },
number = 3,
pages = {1-16},
timestamp = {2018-03-22T06:48:09.000+0100},
title = {OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT
HETEROTRANSISTORS WITHOUT P-NJUNCTIONS
TO DECREASE THEIR DIMENSIONS},
url = {http://wireilla.com/physics/ijrap/index.html},
volume = 3,
year = 2014
}