Conference,

Modeling Voltage-gated KcsA Ion Channels as Solid-State Nanodevices

, , and .
(December 2005)
DOI: 10.1109/ISDRS.2005.1595980

Abstract

In this paper, we present a novel method of simulating KcsA ion channels using a TCAD solid-state device simulator. The ion transport in these channels has interesting similarities with the flow of carriers in electronic nanodevices. With this perspective, we have modeled ion channels as solid-state nanodevices and obtained self-consistent solutions of the axial potential and ion fluxes. Models of cylindrical and KcsA channels are built with the TCAD simulation tools and their steady-state characteristics are studied. The simulation results are compared with the reported experimental results in the literature to verify the efficacy of our method. The ability to simulate realistic ion channel models with such computational ease and reasonable accuracy provides a powerful tool for studying the biological functions of these channels with deeper insight.

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