%0 Journal Article %1 Eckstein_2020 %A Eckstein, Klaus H %A Auth, Michael %A Oberndorfer, Florian %A Schoeppler, Friedrich %A Sperlich, Andreas %A Dyakonov, Vladimir %A Hertel, Tobias %D 2020 %I The Electrochemical Society %J ECS Meeting Abstracts %K doping swnt %N 7 %P 717--717 %R 10.1149/ma2020-017717mtgabs %T (Invited) Charge-Localization in Doped Semiconducting Carbon Nanotubes Revealed By IR- and EPR Spectroscopy %U https://doi.org/10.1149/ma2020-017717mtgabs %V MA2020-01 %X IR and EPR spectroscopic investigations of redox- p-doped semiconducting (6,5) single-wall carbon nanotubes (s-SWNTs) were used to study carrier localization and delocalization from low- up to degenerate doping levels. At low carrier concentrations, the analysis of IR-intraband transitions as well as the appearance of a doping-induced vibrational D-band anti-resonance, point to charge-localization on the few nm length-scale. Moreover, the rise of a spin 1/2 signal in EPR closely tracks the increase of the doping level, supporting the notion of charge-localization at low carrier concentrations. At doping levels exceeding 0.1 nm-1, EPR data as well as intra- and D-band absorption in the IR point to antiferromagnetic coupling between surplus charge carriers becoming dominant. These results are expected to be relevant for field- or redox-chemical doping of s-SWNTs in any polarizable, heterogeneous environment.

@article{Eckstein_2020, abstract = {IR and EPR spectroscopic investigations of redox- p-doped semiconducting (6,5) single-wall carbon nanotubes (s-SWNTs) were used to study carrier localization and delocalization from low- up to degenerate doping levels. At low carrier concentrations, the analysis of IR-intraband transitions as well as the appearance of a doping-induced vibrational D-band anti-resonance, point to charge-localization on the few nm length-scale. Moreover, the rise of a spin 1/2 signal in EPR closely tracks the increase of the doping level, supporting the notion of charge-localization at low carrier concentrations. At doping levels exceeding 0.1 nm-1, EPR data as well as intra- and D-band absorption in the IR point to antiferromagnetic coupling between surplus charge carriers becoming dominant. These results are expected to be relevant for field- or redox-chemical doping of s-SWNTs in any polarizable, heterogeneous environment.}, added-at = {2021-01-14T14:47:25.000+0100}, author = {Eckstein, Klaus H and Auth, Michael and Oberndorfer, Florian and Schoeppler, Friedrich and Sperlich, Andreas and Dyakonov, Vladimir and Hertel, Tobias}, biburl = {https://www.bibsonomy.org/bibtex/288c5089db0cca9215edf0f7c87d3c3ad/hertel-group}, doi = {10.1149/ma2020-017717mtgabs}, interhash = {59b43754583ae3cb290314cc4211a741}, intrahash = {88c5089db0cca9215edf0f7c87d3c3ad}, journal = {{ECS} Meeting Abstracts}, keywords = {doping swnt}, month = may, number = 7, pages = {717--717}, publisher = {The Electrochemical Society}, timestamp = {2021-01-14T14:47:25.000+0100}, title = {(Invited) Charge-Localization in Doped Semiconducting Carbon Nanotubes Revealed By {IR}- and {EPR} Spectroscopy}, url = {https://doi.org/10.1149/ma2020-017717mtgabs}, volume = {{MA}2020-01}, year = 2020 }