Abstract
Excitonic properties of Ge2H2 and Sn2H2, also known as Xanes, are
investigated within the effective mass model. A perpendicularly applied
magnetic field induces a negative shift on the exciton center-of-mass
kinetic energy that is approximately quadratic with its momentum, thus
pushing down the exciton dispersion curve and flattening it. This can be
interpreted as an increase in the effective mass of the magneto-exciton,
tunable by the field intensity. Our results show that in low effective
mass two-dimensional semiconductors, such as Xanes, the applied magnetic
field allows one to tune the magneto-exciton effective mass over a wide
range of values.
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