%0 Journal Article %1 WOS:000176520700008 %A Sombra, SS %A Costa, UMS %A Freire, VN %A de Vasconcelos, EA %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2002 %I ELSEVIER SCIENCE BV %J APPLIED SURFACE SCIENCE %K MOS devices; interface} percolation; simulation; {breakdown; %N 1-4 %P 35-38 %R 10.1016/S0169-4332(01)00882-0 %T The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors %V 190 %X Oxide breakdown in metal-oxide-semiconductor (MOS) devices in the nanometer scale is simulated as a cluster growth depending process in which the local electric field is a function of a randomly varying local dielectric permissivity. Effects of MOS device bias polarity, film thickness and non-uniform defect distributions through the entire oxide film on the breakdown are studied. The slope of the Weibull distribution increases with the oxide thickness in agreement with experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000176520700008, abstract = {Oxide breakdown in metal-oxide-semiconductor (MOS) devices in the nanometer scale is simulated as a cluster growth depending process in which the local electric field is a function of a randomly varying local dielectric permissivity. Effects of MOS device bias polarity, film thickness and non-uniform defect distributions through the entire oxide film on the breakdown are studied. The slope of the Weibull distribution increases with the oxide thickness in agreement with experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {Sombra, SS and Costa, UMS and Freire, VN and de Vasconcelos, EA and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/230635c00936b3591c411c8966a5763b1/ppgfis_ufc_br}, doi = {10.1016/S0169-4332(01)00882-0}, interhash = {5cfe7c6e12e56f61b0daf17d948b3e2c}, intrahash = {30635c00936b3591c411c8966a5763b1}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {MOS devices; interface} percolation; simulation; {breakdown;}, note = {8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001}, number = {1-4}, organization = {Japan Soc Appl Phys; Hokkaido Univ, Res Ctr Integrated Quantum Electr; Int Sci Exchange Program Minist Educ, Culture, Sports, Sci & Technol Japan}, pages = {35-38}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors}, tppubtype = {article}, volume = 190, year = 2002 }