Article,
On Optimization of Doping of a Hetero structure During Manufacturing of P-I-N-Diodes
International Journal of Computational Science, Information Technology and Control Engineering (IJCSITCE), 2 (3): 17 (July 2015)
Abstract
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δdoped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more compact p-i-n-heterodiodes.
Tags
- analytical
- approach
- decreasing
- dimensions
- for
- manufacturing
- modelling
- of
- optimization
- p-i-n-diodes
- p-i-n-heterodiodes
- δ-doping
