%0 Conference Paper %1 Haeberlin2007 %A Haeberlin, H. %D 2007 %K Lightning PV bypass diodes, modules, protection protection, surge %T Damages at Bypass Diodes by Induced Voltages and Currents in PV Modules Caused by Nearby Lightning Currents %X In 1990 – 1993 and during an EU project in 1998 – 2000, the PV laboratory of BFH-TI has carried out tests about sensitivity of PV modules against lightning currents flowing in or close to the frame of a PV module 1, 2, 3. For these tests, impulse currents with imax â‰? 120kA and di/dtmax â‰? 40kA/Î?s were used. It could be shown that even at moderate distances the voltages induced in a module by such lightning currents may go up to several thousand volts. Such voltages could easily destroy bypass diodes. Due to increasing cell dimensions and therefore increasing currents, more and more Schottky diodes are used as bypass diodes, which have only quite low reverse voltage ratings between 40 V and 100 V. In practical operation, such damages actually occur, but usually (and fortunately!) only at considerably higher peak induced voltages than the reverse voltage rating of the Schottky diode. First tests with such bypass diodes and simple wire loop models were performed in Dec. 2006 4. In this paper, this problem is analysed more thoroughly, a model to calculate a rough estimate of the voltages and currents stressing the bypass diodes is introduced and some results of practical measurements at bypass diodes in real modules are given 5.

@inproceedings{Haeberlin2007, abstract = {In 1990 – 1993 and during an EU project in 1998 – 2000, the PV laboratory of BFH-TI has carried out tests about sensitivity of PV modules against lightning currents flowing in or close to the frame of a PV module [1], [2], [3]. For these tests, impulse currents with imax â‰? 120kA and di/dtmax â‰? 40kA/Î?s were used. It could be shown that even at moderate distances the voltages induced in a module by such lightning currents may go up to several thousand volts. Such voltages could easily destroy bypass diodes. Due to increasing cell dimensions and therefore increasing currents, more and more Schottky diodes are used as bypass diodes, which have only quite low reverse voltage ratings between 40 V and 100 V. In practical operation, such damages actually occur, but usually (and fortunately!) only at considerably higher peak induced voltages than the reverse voltage rating of the Schottky diode. First tests with such bypass diodes and simple wire loop models were performed in Dec. 2006 [4]. In this paper, this problem is analysed more thoroughly, a model to calculate a rough estimate of the voltages and currents stressing the bypass diodes is introduced and some results of practical measurements at bypass diodes in real modules are given [5].}, added-at = {2011-09-01T13:26:03.000+0200}, author = {Haeberlin, H.}, biburl = {https://www.bibsonomy.org/bibtex/2458d9cfdb96c2f074e2430e0f2c89712/procomun}, file = {Haeberlin2007.pdf:Haeberlin2007.pdf:PDF}, interhash = {947aadbeb3f8d5204c3f34161ca22c91}, intrahash = {458d9cfdb96c2f074e2430e0f2c89712}, keywords = {Lightning PV bypass diodes, modules, protection protection, surge}, owner = {oscar}, refid = {Haeberlin2007}, timestamp = {2011-09-02T08:25:25.000+0200}, title = {Damages at Bypass Diodes by Induced Voltages and Currents in {PV} Modules Caused by Nearby Lightning Currents}, year = 2007 }