Abstract
The excitonic properties of a ZnSe/ZnSxSe1-x strained quantum well (QW)
are calculated taking into account interface effects. Numerical results
obtained with ZnS0.18Se0.82/ZnSe QWs show that graded interfaces can be
responsible for a strong broadening of excitonic spectra. (C) 2002
Elsevier Science B.V. All rights reserved.
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