Abstract
In this paper, we describe the design, characterization, and modeling
of InGaAsP/InP avalanche diodes designed for single photon detection
at wavelengths of 1.55 and 1.06 mum. Through experimental and theoretical
work, we investigate critical performance parameters of these single
photon avalanche diodes (SPADs), including dark count rate (DCR),
photon detection efficiency (PDE), and afterpulsing. The models developed
for the simulation of device performance provide good agreement with
experimental results for all parameters studied. For 1.55-mum SPADs,
we report the relationship between DCR and PDE for gated mode operation
under a variety of operating conditions. We also describe in detail
the dependence of afterpulsing effects on numerous operating conditions,
and in particular, we demonstrate and explain a universal functional
form that describes the dependence of DCR on hold-off time at any
temperature. For 1.06-mum SPADs, we present the experimentally determined
relationship between DCR and detection efficiency for free-running
operation, as well as simulations complementing the experimental
data.
- 1.06
- 1.55
- afterpulsing
- arsenide,
- avalanche
- compounds,
- count
- dark
- detection
- detection,
- diodes,
- effects,
- efficiency,
- gallium
- hold-off
- iii-v
- indium
- mum
- mum,
- photodetectorsingaasp-inp,
- photodiodes,
- photon
- rate,
- semiconductors,
- single
- time,
- wavelength
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