%0 Journal Article %1 WOS:000089432000063 %A Adib, AB %A de Sousa, JS %A Farias, GA %A Freire, VN %C RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS %D 2000 %I ELSEVIER %J APPLIED SURFACE SCIENCE %K GaSb/AlxGa1-xSb blue carriers confinement effects; energy exciton properties} quantum shift; wells; {interface %N 1-4 %P 336-340 %R 10.1016/S0169-4332(00)00445-1 %T Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells %V 166 %X A theoretical investigation on the confinement properties of GaSb/AlxGa1-xSb single quantum wells (QWs) with smooth interfaces is performed. Error function (erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs. (C) 2000 Elsevier Science B.V. All rights reserved.

@article{WOS:000089432000063, abstract = {A theoretical investigation on the confinement properties of GaSb/AlxGa1-xSb single quantum wells (QWs) with smooth interfaces is performed. Error function (erf)-like interfacial aluminum molar fraction variations in the QWs, from which it is possible to obtain the carriers effective masses and confinement potential profiles, are assumed. It is shown that the existence of smooth interfaces blue shifts considerably the confined carriers and exciton energies, an effect which is stronger in thin QWs. (C) 2000 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS}, author = {Adib, AB and de Sousa, JS and Farias, GA and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/2cd5e5c6d6e29fe129f9aee17f61350ab/ppgfis_ufc_br}, doi = {10.1016/S0169-4332(00)00445-1}, interhash = {e8c529b6d2baf1f5d772df525564c6cb}, intrahash = {cd5e5c6d6e29fe129f9aee17f61350ab}, issn = {0169-4332}, journal = {APPLIED SURFACE SCIENCE}, keywords = {GaSb/AlxGa1-xSb blue carriers confinement effects; energy exciton properties} quantum shift; wells; {interface}, note = {7th International Conference on the Formation of Semiconductor Interfaces (ICFSI-7), GOTHENBURG, SWEDEN, JUN 21-25, 1999}, number = {1-4}, organization = {Chalmers Univ Technol; Goteborg Univ; Royal Acad Sci, Nobel Inst Phys; Swedish Nat Sci Res Council; Swedish Res Council Engn Sci}, pages = {336-340}, publisher = {ELSEVIER}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Smooth interface effects on the confinement properties of GaSb/AlxGa1-xSb quantum wells}, tppubtype = {article}, volume = 166, year = 2000 }