Abstract
In this paper we introduce an approach to optimize technological process of manufacturing of heterotransistors with two sources to decrease their dimensions. Framework the approach we consider a heterostructure with specific configuration. After manufacturing of the heterostructure we consider doping of several areas of the heterostructure by diffusion or ion implantation. The doping was finished by optimized annealing of dopant and/or radiation defects. We introduce an analytical approach for prognosis of mass transport to obtain the required results.
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