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Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

, , , , and . Solid-State Electronics, 51 (4): 611--616 (April 2007)Impact Factor =1.247 (2005).
DOI: http://dx.doi.org/10.1016/j.sse.2007.02.022

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Intrinsic Parameter Fluctuations in Sub-10 nm generation UTB SOI MOSFETs, , , , and . 7th European Conference on Ultimate Integration of Silicon (ULIS), page 93-96. Bologna, Italy, (April 2006)Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study, , , , and . Solid-State Electronics, 51 (4): 611--616 (April 2007)Impact Factor =1.247 (2005).