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11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology., , , , , , , , , and 47 other author(s). ISSCC, page 196-197. IEEE, (2017)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , and 22 other author(s). IEEE J. Solid State Circuits, 48 (1): 159-167 (2013)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , and 45 other author(s). ISSCC, page 422-424. IEEE, (2012)A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology., , , , , , , , , and 17 other author(s). IEEE J. Solid State Circuits, 51 (1): 196-203 (2016)30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology., , , , , , , , , and 49 other author(s). ISSCC, page 428-430. IEEE, (2021)7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology., , , , , , , , , and 17 other author(s). ISSCC, page 1-3. IEEE, (2015)