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Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror

, , , , , , , , and . Electronics Letters, 35 (1): 49-50 (January 1999)
DOI: 10.1049/el:19990014

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Systematics of electrical conductivity across InP to GaAs wafer fused interfaces, , , , , , , and . page 801-804. (May 1998)Temperature-dependent performance of 1.55 μm vertical-cavity lasers with InGaAsP/InP bottom mirror, , , , , , , and . page 223-226. (1999)Characterisation of n-InP/n-GaAs wafer fused heterojunctions, , , , and . Physica Scripta, (1999)Flip Chipped INGaAs Photodiode Arrays for Gated Imaging with Eye-Safe Lasers, , , , , , , and . page 1103-1106. (June 2007)Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror, , , , , , , , and . Electronics Letters, 35 (1): 49-50 (January 1999)All epitaxial single-fused 1.55 μm vertical cavity laser based on an InP Bragg reflector, , , , , , and . page 303-306. (May 1998)Wafer fused p-InP/p-GaAs heterojunctions, , , , , , , , , and . Journal of Applied Physics, 83 (2): 768--774 (1998)Novel technologies for 1.55-mu m vertical cavity lasers, , , , , , , , , and 12 other author(s). Optical Engineering, 39 (2): 488--497 (2000)Long-wavelength vertical-cavity lasers, , , , , , , , , and 9 other author(s). 3625, page 304--314. SPIE, (1999)