Author of the publication

Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs

, , , , , and . IEEE Electron Device Letters, 44 (5): 773-776 (May 2023)
DOI: 10.1109/LED.2023.3254609

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

P-11: High Performance All-Solution Processed InZnO Thin-Film Transistors via Photo-Functionalization at Varying Fluence and Annealing Environment, , , , , and . SID Symposium Digest of Technical Papers, 51 (1): 1350--1353 (August 2020)Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate, , , , , , and . IEEE Journal on Flexible Electronics, 1 (3): 159-166 (July 2022)AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits, , , , , , and . IEEE Transactions on Electron Devices, 69 (9): 4930--4935 (2022)AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact, , , , , , , , , and . IEEE Transactions on Electron Devices, (2023)AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits, , , , , , and . IEEE Transactions on Electron Devices, 69 (9): 4930-4935 (September 2022)Unobtrusive Thin-Film Devices and Sustainable Green Electronics, , , and . 2023 IEEE International Flexible Electronics Technology Conference (IFETC), page 1-3. IEEE, (August 2023)AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact, , , , , , , , , and . IEEE Transactions on Electron Devices, 70 (12): 6359-6363 (December 2023)Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs, , , , , and . IEEE Electron Device Letters, 44 (5): 773-776 (May 2023)Influence of semiconductor island geometry on the AC performance of flexible InGaZnO TFTs, , , , , and . IEEE Electron Device Letters, (2023)In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate, , , , , and . 2023 IEEE International Flexible Electronics Technology Conference (IFETC), page 1-3. IEEE, (August 2023)