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An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices., , , , , , and . IEEE Trans. Instrumentation and Measurement, 61 (2): 456-461 (2012)Prediction of LIN communication robustness against EFT events using dedicated failure models., , , and . Microelectron. Reliab., (2017)Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation., , , , and . Microelectron. Reliab., 53 (2): 221-228 (2013)Electrostatic discharge failure analysis of capacitive RF MEMS switches., , , , , , and . Microelectron. Reliab., 47 (9-11): 1818-1822 (2007)Analysis and Compact Modeling of a Vertical Grounded-Base n-p-n Bipolar Transistor Used as ESD Protection in a Smart Power Technology, , , , , , , , and . IEEE J.~Solid~State~Circuits, 36 (9): 1373--1381 (September 2001)Editorial., , , , and . Microelectron. Reliab., 55 (9-10): 1269-1270 (2015)Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure., , , , , , , , and . Microelectron. Reliab., 45 (9-11): 1415-1420 (2005)Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology., , , , , , , , and . IEEE J. Solid State Circuits, 36 (9): 1373-1381 (2001)Determination of the ESD Failure Cause Through its Signature., , , , , and . Microelectron. Reliab., 43 (9-11): 1551-1556 (2003)Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications., , , , , , , , and . Microelectron. Reliab., 44 (9-11): 1781-1786 (2004)