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Strain-engineered self-assembled semiconductor quantum dot lattices

, , , , and . Appl.~Phys.~Lett., 78 (1): 105--107 (2001)

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Electron and hole energy levels in InAs self-asembled quantum dots, , and . Appl.~Phys.~Lett., (1995)Spectroscopy of Nanoscopic Semiconductor Rings, , , , , and . Phys.~Rev.~Lett., (2000)Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots., , , , , and . Microelectron. J., 39 (3-4): 331-334 (2008)Storage of electrons and holes in self-assembled InAs quantum dots, , , , , and . Appl.~Phys.~Lett., 74 (13): 1839 (1999)Carrier relaxation and electronic structure in InAs self-assembled quantum dots, , , , and . Phys.~Rev.~B, (1996)Coulomb interactions in small charge-tunable quantum dots: A simple model, , , , , , , , and . Phys.~Rev.~B, (1998)Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled $InAs/GaAs$ Quantum Dots, , , , , , , and . Phys.~Rev.~Lett., (2000)Direct Formation Of Quantum-Sized Dots From Uniform Coherent Islands Of InGaAS On GaAs Surfaces, , , , and . Appl.~Phys.~Lett., (1993)Size quantisation effects in InAs self-assembled quantum dots, , , and . Appl.~Phys.~Lett., (1997)Strain-engineered self-assembled semiconductor quantum dot lattices, , , , and . Appl.~Phys.~Lett., 78 (1): 105--107 (2001)