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Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale., , , и . Microelectron. Reliab., 45 (9-11): 1390-1393 (2005)Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization., , , , и . DCIS, стр. 1-4. IEEE, (2018)Reliability simulation for analog ICs: Goals, solutions, and challenges., , , , , , , и . Integr., (2016)Effect of oxide breakdown on RS latches., , , и . Microelectron. Reliab., 47 (4-5): 581-584 (2007)Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells., , , , , , , и . SMACD, стр. 1-4. IEEE, (2017)Threshold voltage and on-current Variability related to interface traps spatial distribution., , , , , , , , и . ESSDERC, стр. 230-233. IEEE, (2015)Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures., , , , , , , , , и 1 other автор(ы). Microelectron. Reliab., 52 (9-10): 2110-2114 (2012)Unified characterization of RTN and BTI for circuit performance and variability simulation., , , , и . ESSDERC, стр. 266-269. IEEE, (2012)Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies., , , , , , , , и . DATE, стр. 1322-1327. ACM, (2008)Experimental Investigation of Memristance Enhancement., , , , и . NANOARCH, стр. 1-2. IEEE, (2019)