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Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells

, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 247-251 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.
DOI: 10.1016/S0169-4332(01)00856-X

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