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Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors., , , , , , and . ESSDERC, page 412-415. IEEE, (2016)Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2023)At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells., , , , , , , , and . IMW, page 1-4. IEEE, (2022)Beyond-Si materials and devices for more Moore and more than Moore applications., , , , , , , , , and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)The Promise of 2-D Materials for Scaled Digital and Analog Applications., , , , , , , , , and 2 other author(s). ISSCC, page 394-395. IEEE, (2023)A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics., , , , , , , , and . IMW, page 1-4. IEEE, (2021)Enabling 3D NAND Trench Cells for Scaled Flash Memories., , , , , , , , and . IMW, page 1-4. IEEE, (2023)Liquid Memory and the Future of Data Storage., , , , , , , , , and 6 other author(s). IMW, page 1-4. IEEE, (2022)Analysis of BTI in 300 mm integrated dual-gate WS2 FETs., , , , , , and . DRC, page 1-2. IEEE, (2022)Impact of Mechanical Stress on the Electrical Performance of 3D NAND., , , , , , and . IRPS, page 1-5. IEEE, (2019)