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Beyond-Si materials and devices for more Moore and more than Moore applications.

N. Collaert, A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, T. Ivanov, D. Lin, J. Mitard, S. Ramesh, R. Rooyackers, M. Schaekers, A. Sibaya-Hernandez, S. Sioncke, Q. Smets, A. Vais, A. Vandooren, A. Veloso, A. Verhulst, D. Verreck, N. Waldron, A. Walke, L. Witters, H. Yu, X. Zhou, and A. Thean. ICICDT, page 1-5. IEEE, (2016)

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Kai Marc Geertsema

Jakob Geerthsen

Philipp Geertsen

Arie Geertsema

Arno Geertz

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Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress.K. Lee, B. Kaczer, A. Kruv, M. Gonzalez, G. Eneman, O. Okudur, A. Grill, J. Franco, A. Vici, R. Degraeve and 1 other author(s). IRPS, page 10. IEEE, (2022)Assessment of SiGe quantum well transistors for DRAM peripheral applications.R. Ritzenthaler, T. Schram, G. Eneman, A. Mocuta, N. Horiguchi, A. Thean, A. Spessot, M. Aoulaiche, P. Fazan, K. Noh and 1 other author(s). ICICDT, page 1-4. IEEE, (2015)PPAC scaling enablement for 5nm mobile SoC technology.M. Badaroglu, J. Xu, J. Zhu, D. Yang, J. Bao, S. Song, P. Feng, R. Ritzenthaler, H. Mertens, G. Eneman and 7 other author(s). ESSDERC, page 240-243. IEEE, (2017)3D chip package interaction thermo-mechanical challenges: Proximity effects of Through Silicon vias and μ-bumps.W. Guo, G. der Plas, A. Ivankovic, G. Eneman, V. Cherman, B. Wachter, A. Mercha, M. Gonzalez, Y. Civale, A. Redolfi and 9 other author(s). ICICDT, page 1-4. IEEE, (2012)Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.S. Tyaginov, A. Makarov, A. El-Sayed, A. Chasin, E. Bury, M. Jech, M. Vandemaele, A. Grill, A. Keersgieter, M. Vexler and 2 other author(s). IRPS, page 6. IEEE, (2022)Analysis of microbump induced stress effects in 3D stacked IC technologies.A. Ivankovic, G. der Plas, V. Moroz, M. Choi, V. Cherman, A. Mercha, P. Marchal, M. Gonzalez, G. Eneman, W. Zhang and 9 other author(s). 3DIC, page 1-5. IEEE, (2011)FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below.G. Eneman, A. Keersgieter, A. Mocuta, N. Collaert, and A. Thean. ICICDT, page 1-4. IEEE, (2015)Lateral NWFET optimization for beyond 7nm nodes.D. Yakimets, D. Jang, P. Raghavan, G. Eneman, H. Mertens, P. Schuddinck, A. Mallik, M. Bardon, N. Collaert, A. Mercha and 3 other author(s). ICICDT, page 1-4. IEEE, (2015)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, P. Rousse, T. Grasser, M. Cho, T. Kauerauf and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Scalability comparison between raised- and embedded-SiGe source/drain structures for Si0.55Ge0.45 implant free quantum well pFET.S. Yamaguchi, L. Witters, J. Mitard, G. Eneman, G. Hellings, A. Hikavyy, R. Loo, and N. Horiguchi. Microelectron. Reliab., (2018)

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Disambiguation of "Eneman, Geert"

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Beyond-Si materials and devices for more Moore and more than Moore applications.

Please choose a person to relate this publication to

Kai Marc Geertsema

Jakob Geerthsen

Philipp Geertsen

Arie Geertsema

Arno Geertz

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Eneman, Geert"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Beyond-Si materials and devices for more Moore and more than Moore applications.

Please choose a person to relate this publication to

Kai Marc Geertsema

Jakob Geerthsen

Philipp Geertsen

Arie Geertsema

Arno Geertz

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Beyond-Si materials and devices for more Moore and more than Moore applications.