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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light., , , , , , , , and . Sci. China Inf. Sci., (February 2023)Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature., , , , , , , and . IEEE Access, (2020)An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs., , , , , , and . IEEE Access, (2022)Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs., , , , , , , , and . IRPS, page 1. IEEE, (2018)Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress., , , , , , and . Microelectron. Reliab., 54 (6-7): 1293-1298 (2014)Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method., , , , , , , , , and . Sci. China Inf. Sci., (2022)Surface scattering and emission models for ocean surface salinity remote sensing., , , and . IGARSS, page 4431-4434. IEEE, (2014)A Data-Driven Approach for Furniture and Indoor Scene Colorization., , and . IEEE Trans. Vis. Comput. Graph., 24 (9): 2473-2486 (2018)Video-level Multi-model Fusion for Action Recognition., , , , , and . CIKM, page 159-168. ACM, (2019)Joint event detection and environment perception in decentralised wireless sensor networks., , , and . Int. J. Sens. Networks, 21 (3): 169-178 (2016)