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Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI Technology.

, , , , , and . ISVLSI, page 320-325. IEEE Computer Society, (2017)

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Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI Technology., , , , , and . ISVLSI, page 320-325. IEEE Computer Society, (2017)Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologies., , , , and . LATS, page 1-5. IEEE, (2018)Detection of resistive open and short defects in FDSOI under delay-based test: Optimal VDD and body biasing conditions., , , , , and . ETS, page 1-2. IEEE, (2017)Resistive Bridging Defect Detection in Bulk, FDSOI and FinFET Technologies., , , , and . J. Electron. Test., 33 (4): 515-527 (2017)Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defect., , , , and . LATS, page 129-134. IEEE, (2016)Impact of VT and Body-Biasing on Resistive Short Detection in 28nm UTBB FDSOI - LVT and RVT Configurations., , , , and . ISVLSI, page 164-169. IEEE Computer Society, (2016)Analytical Models for the Evaluation of Resistive Short Defect Detectability in Presence of Process Variations: Application to 28nm Bulk and FDSOI Technologies., , , , and . J. Electron. Test., 35 (1): 59-75 (2019)