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Tunnel field-effect transistors as energy-efficient electronic switches., and . Nature, 479 (7373): 329-337 (2011)Complementary III-V heterostructure tunnel FETs., , , , , and . ESSDERC, page 403-407. IEEE, (2016)III-V semiconductor nanowires for future devices., , , , , , , , and . DATE, page 1-2. European Design and Automation Association, (2014)Electrical and thermoelectrical properties of gated InAs nanowires., , , , , , , and . ESSDERC, page 252-255. IEEE, (2013)Ballistic transport and high thermopower in one-dimensional InAs nanowires., , , , , , , and . ESSDERC, page 341-344. IEEE, (2016)Reversible and Controllable Switching of a Single-Molecule Junction, , , and . Small, 2 (8-9): 973--977 (2006)The Future of Nanoelectronics: New Materials, Architectures and Devices.. ISVLSI, page 446. IEEE Computer Society, (2015)Influence of trapped and interfacial charges in organic multilayer light-emitting devices., , , , , and . IBM J. Res. Dev., 45 (1): 77-88 (2001)Monolithic Integration of III -V on silicon for photonic and electronic applications., , , , , , , , , and 1 other author(s). DRC, page 1-2. IEEE, (2018)