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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm., , , , and . Microelectron. Reliab., 50 (9-11): 1379-1382 (2010)Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology., , , , , , , and . Microelectron. Reliab., 52 (9-10): 1998-2004 (2012)BIMOS transistor and its applications in ESD protection in advanced CMOS technology., , , , , , , , and . ICICDT, page 1-4. IEEE, (2012)ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology., , , , , , and . ICICDT, page 199-202. IEEE, (2013)A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node., , , , , and . Microelectron. Reliab., 51 (9-11): 1614-1617 (2011)New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology., , and . ICICDT, page 1-4. IEEE, (2014)Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies., , , , , and . Microelectron. Reliab., 51 (9-11): 1608-1613 (2011)Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1284-1287 (2013)