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A 77GHz transceiver in 90nm CMOS., , , , and . ISSCC, page 310-311. IEEE, (2009)300-GHz Amplifier in 75-nm InP HEMT Technology., , , , , , , , , and . IEICE Trans. Electron., 99-C (5): 528-534 (2016)Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis., , , , , , , , and . IEICE Trans. Electron., 98-C (12): 1112-1119 (2015)Submillimeter-wave InP HEMT amplifiers with current-reuse topology., , , , , , and . RWS, page 250-252. IEEE, (2013)A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology., , , , , , , , , and 2 other author(s). IEEE J. Solid State Circuits, 37 (12): 1703-1709 (2002)A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs., , , , , , , and . IEEE J. Solid State Circuits, 36 (9): 1309-1313 (2001)A 80-gbit/s D-type flip-flop circuit using InP HEMT technology., , , and . IEEE J. Solid State Circuits, 39 (10): 1706-1711 (2004)Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers., , , , , , , and . IEICE Trans. Electron., 100-C (5): 417-423 (2017)W-band ultra-high data-rate 65nm CMOS wireless transceiver., , , , , , , , and . ASP-DAC, page 5-6. IEEE, (2017)13.3 A 56Gb/s W-band CMOS wireless transceiver., , , , , , , , , and 8 other author(s). ISSCC, page 242-243. IEEE, (2016)