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Toward effective passivation of graphene to humidity sensing effects., , , , , , and . ESSDERC, page 299-302. IEEE, (2016)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , and . IRPS, page 2. IEEE, (2015)Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer., , , , and . ESSDERC, page 361-364. IEEE, (2014)High power devices in wide bandgap semiconductors.. Sci. China Inf. Sci., 54 (5): 1087-1093 (2011)Gated base structure for improved current gain in SiC bipolar technology., , , and . ESSDERC, page 122-125. IEEE, (2017)Step tunneling-enhanced hot-electron injection in vertical graphene base transistors., , , , , , and . ESSDERC, page 198-201. IEEE, (2015)Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors., , , and . Microelectron. Reliab., 41 (6): 881-886 (2001)Bipolar Technology., and . The VLSI Handbook, CRC Press, (1999)PDMS-supported graphene transfer using intermediary polymer layers., , , , and . ESSDERC, page 309-312. IEEE, (2014)CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects., , , and . ESSDERC, page 93-96. IEEE, (2012)