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Disambiguation of "Yasuhara, Ryutaro"

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Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM.

, , , , , , , , , , , , , , , , , , and . ISSCC, page 220-221. IEEE, (2013)

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Ryutaro Tsuchida

 

Other publications of authors with the same name

Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM., , , , and . IRPS, page 4-1. IEEE, (2018)TaOx ReRAM as a Highly-Reliable Embedded Memory and Its Application to Edge AI.. VLSI-DAT, page 1. IEEE, (2020)A new prediction method for ReRAM data retention statistics based on 3D filament structures., , , , , and . IRPS, page 5. IEEE, (2015)Study of error repeatability and recovery in 40nm TaOx ReRAM., , , , and . ESSDERC, page 10-13. IEEE, (2017)Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM., , , , , , , , , and 9 other author(s). ISSCC, page 220-221. IEEE, (2013)Observation and Analysis of Bit-by-Bit Cell Current Variation During Data-Retention of TaOx-based ReRAM., , , and . ESSDERC, page 46-49. IEEE, (2018)Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application., , , , , , , , , and 10 other author(s). VLSIC, page 14-. IEEE, (2015)Comprehensive Analysis of Data-Retention and Endurance Trade-Off of 40nm TaOx-based ReRAM., , , , , and . IRPS, page 1-6. IEEE, (2019)Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify., , , and . NVMTS, page 1-4. IEEE, (2018)Quantitative method for estimating characteristics of conductive filament in ReRAM., , , , , and . ISCAS, page 842-845. IEEE, (2014)