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SUPREM 3.5-process modeling of GaAs integrated circuit technology.

, , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 8 (9): 939-951 (1989)

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A process and device model for GaAs MESFET technology: GATES., and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 8 (4): 350-359 (1989)SUPREM 3.5-process modeling of GaAs integrated circuit technology., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 8 (9): 939-951 (1989)Numerical simulation of the gas immersion laser doping (GILD) process in silicon., , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 7 (2): 205-214 (1988)