On Optimization of Manufacturing of Multichannel Heterotransistors to Increase Their Integration Rate
E. Pankratov, and E. Bulaeva. International Journal of Recent advances in Physics (IJRAP)4 (4):
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.