%0 Journal Article %1 WOS:000182700700218 %A dos Santos, RP %A Nobre, FVJ %A Costa, UMS %A Freire, VN %A Lyra, ML %A da Silva, EF %C PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS %D 2003 %I ELSEVIER SCIENCE BV %J PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES %K breakdown; devices} dielectric semiconductor {percolation; %N 1-4 %P 645-647 %R 10.1016/S1386-9477(02)00919-0 %T A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices %V 17 %X We generalize a two-dimensional dynamic percolation model of dielectric breakdown of the SiO2 in metal-oxide-semiconductor capacitors to include the effect of device area and oxide defect concentration. The strategy allows for dielectric breakdown to start in several points (seeds) of the Si/SiO2 interface. The results which arise for the behavior of the time to dielectric breakdown (t(BD)) with area, and the effect of the number of seeds (defects) at the interface allow for an improved agreement with experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.

@article{WOS:000182700700218, abstract = {We generalize a two-dimensional dynamic percolation model of dielectric breakdown of the SiO2 in metal-oxide-semiconductor capacitors to include the effect of device area and oxide defect concentration. The strategy allows for dielectric breakdown to start in several points (seeds) of the Si/SiO2 interface. The results which arise for the behavior of the time to dielectric breakdown (t(BD)) with area, and the effect of the number of seeds (defects) at the interface allow for an improved agreement with experimental results. (C) 2002 Elsevier Science B.V. All rights reserved.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}, author = {dos Santos, RP and Nobre, FVJ and Costa, UMS and Freire, VN and Lyra, ML and da Silva, EF}, biburl = {https://www.bibsonomy.org/bibtex/2f58e300680c17d052e2ca9753e0538de/ppgfis_ufc_br}, doi = {10.1016/S1386-9477(02)00919-0}, interhash = {0ca607de8847db3ab41664cef5ef4ac7}, intrahash = {f58e300680c17d052e2ca9753e0538de}, issn = {1386-9477}, journal = {PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES}, keywords = {breakdown; devices} dielectric semiconductor {percolation;}, note = {International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), TOULOUSE, FRANCE, JUL 22-26, 2002}, number = {1-4}, pages = {645-647}, publisher = {ELSEVIER SCIENCE BV}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {A multi-defect initialization-based percolation model: a successful scheme to explain dielectric breakdown in MOS devices}, tppubtype = {article}, volume = 17, year = 2003 }