Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).
Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Conference Paper
%1 conf/vlsit/WangKHSXZKKZWG22
%A Wang, Chengkuan
%A Kumar, Annie
%A Han, Kaizhen
%A Sun, Chen
%A Xu, Haiwen
%A Zhang, Jishen
%A Kang, Yuye
%A Kong, Qiwen
%A Zheng, Zijie
%A Wang, Yuxuan
%A Gong, Xiao
%B VLSI Technology and Circuits
%D 2022
%I IEEE
%K dblp
%P 294-295
%T Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).
%U http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#WangKHSXZKKZWG22
%@ 978-1-6654-9772-5
@inproceedings{conf/vlsit/WangKHSXZKKZWG22,
added-at = {2023-12-19T00:00:00.000+0100},
author = {Wang, Chengkuan and Kumar, Annie and Han, Kaizhen and Sun, Chen and Xu, Haiwen and Zhang, Jishen and Kang, Yuye and Kong, Qiwen and Zheng, Zijie and Wang, Yuxuan and Gong, Xiao},
biburl = {https://www.bibsonomy.org/bibtex/2cbd764bb9a93f0a728cbe4977621dca4/dblp},
booktitle = {VLSI Technology and Circuits},
crossref = {conf/vlsit/2022},
ee = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830393},
interhash = {05881810a36e6720cf2dc3a4a729efb2},
intrahash = {cbd764bb9a93f0a728cbe4977621dca4},
isbn = {978-1-6654-9772-5},
keywords = {dblp},
pages = {294-295},
publisher = {IEEE},
timestamp = {2024-04-09T19:13:06.000+0200},
title = {Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V).},
url = {http://dblp.uni-trier.de/db/conf/vlsit/vlsit2022.html#WangKHSXZKKZWG22},
year = 2022
}
