%0 Journal Article %1 WOS:000088756200003 %A de Vasconcelos, EA %A da Silva, EF %A Khoury, HJ %A Freire, VN %C DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND %D 2000 %I IOP PUBLISHING LTD %J SEMICONDUCTOR SCIENCE AND TECHNOLOGY %K imported %N 8 %P 794-798 %R 10.1088/0268-1242/15/8/302 %T Effect of ageing on x-ray induced dopant passivation in MOS capacitors %V 15 %X Boron and phosphorus passivation in silicon metal-oxide-semiconductor (MOS) capacitors under x-ray irradiation follows a power law in the form Delta N/N-0 similar to (dose)(alpha), with 1/2 less than or equal to alpha less than or equal to 1, depending on processing parameters and the device history before irradiation. The minimum x-ray dose for observation of dopant passivation in fluorinated p-type MOS capacitors is smaller when the time interval between fabrication and subsequent irradiation increases. We reason that room-temperature ageing within this timescale is a result of either adsorption of water or gradual reactions of fluorine with hydrogen, silicon or oxygen-related species in the neighbourhood of the SiO2/Si interface.

@article{WOS:000088756200003, abstract = {Boron and phosphorus passivation in silicon metal-oxide-semiconductor (MOS) capacitors under x-ray irradiation follows a power law in the form Delta N/N-0 similar to (dose)(alpha), with 1/2 less than or equal to alpha less than or equal to 1, depending on processing parameters and the device history before irradiation. The minimum x-ray dose for observation of dopant passivation in fluorinated p-type MOS capacitors is smaller when the time interval between fabrication and subsequent irradiation increases. We reason that room-temperature ageing within this timescale is a result of either adsorption of water or gradual reactions of fluorine with hydrogen, silicon or oxygen-related species in the neighbourhood of the SiO2/Si interface.}, added-at = {2022-05-23T20:00:14.000+0200}, address = {DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND}, author = {de Vasconcelos, EA and da Silva, EF and Khoury, HJ and Freire, VN}, biburl = {https://www.bibsonomy.org/bibtex/235cd75443b0ffd142a5f06234457d09b/ppgfis_ufc_br}, doi = {10.1088/0268-1242/15/8/302}, interhash = {08967cbfaed3050b87e2e34b7bf824ab}, intrahash = {35cd75443b0ffd142a5f06234457d09b}, issn = {0268-1242}, journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, keywords = {imported}, number = 8, pages = {794-798}, publisher = {IOP PUBLISHING LTD}, pubstate = {published}, timestamp = {2022-05-23T20:00:14.000+0200}, title = {Effect of ageing on x-ray induced dopant passivation in MOS capacitors}, tppubtype = {article}, volume = 15, year = 2000 }