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13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.

, , , , , , , , , , , и . ISSCC, стр. 222-224. IEEE, (2020)

Линки и ресурсы

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