Abstract
The electronic tunneling properties of the two stable forms of trilayer
graphene (TLG), rhombohedral ABC and Bernal ABA, are examined for p-n
and p-n-p junctions as realized by using a single gate (SG) or a double
gate (DG). For the rhombohedral form, due to the chirality of the
electrons, the Klein paradox is found at normal incidence for SG
devices, while at high-energy interband scattering between additional
propagation modes can occur. The electrons in Bernal ABA TLG can have a
monolayer- or bilayer-like character when incident on a SG device. Using
a DG, however, both propagation modes will couple by breaking the mirror
symmetry of the system, which induces intermode scattering and
resonances that depend on the width of the DG p-n-p junction. For ABC
TLG the DG opens up a band gap which suppresses Klein tunneling. The DG
induces also an unexpected asymmetry in the tunneling angle for
single-valley electrons.
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