Abstract
We present a theoretical study on the behavior of confined exciton
energies of single 3C-, 4H-, and 6H-SiC/SiO2 quantum wells and wires
within an abrupt/nonabrupt interface picture. We find that differences
between exciton energies in abrupt quantum wells and wires are very
significant (up to similar to 150 meV), depending on the polytype and
the thickness of the nonabrupt, SiC/SiO2 interfaces. The exciton
blueshift due to a 5 Angstrom wide nonabrupt interface is very strong
(up to similar to 120 meV).
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