Article,

Blue light emission from confined excitons in SiC/SiO2 quantum wells and wires

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JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 39 (3): 443-446 (2001)International Conference on Superlattices Microstructures and Microdevices 2000, KYONGJU, SOUTH KOREA, SEP 25-27, 2000.

Abstract

We present a theoretical study on the behavior of confined exciton energies of single 3C-, 4H-, and 6H-SiC/SiO2 quantum wells and wires within an abrupt/nonabrupt interface picture. We find that differences between exciton energies in abrupt quantum wells and wires are very significant (up to similar to 150 meV), depending on the polytype and the thickness of the nonabrupt, SiC/SiO2 interfaces. The exciton blueshift due to a 5 Angstrom wide nonabrupt interface is very strong (up to similar to 120 meV).

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