%0 Conference Paper %1 conf/essderc/BeneventiGGRB13 %A Beneventi, Giovanni Betti %A Gnani, Elena %A Gnudi, Antonio %A Reggiani, Susanna %A Baccarani, Giorgio %B ESSDERC %D 2013 %I IEEE %K dblp %P 73-76 %T Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. %U http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#BeneventiGGRB13

@inproceedings{conf/essderc/BeneventiGGRB13, added-at = {2019-09-25T00:00:00.000+0200}, author = {Beneventi, Giovanni Betti and Gnani, Elena and Gnudi, Antonio and Reggiani, Susanna and Baccarani, Giorgio}, biburl = {https://www.bibsonomy.org/bibtex/222c7a1448fb43dfe2398ebae3378e1fa/dblp}, booktitle = {ESSDERC}, crossref = {conf/essderc/2013}, ee = {https://www.wikidata.org/entity/Q60583981}, interhash = {2324c959f739831f9b45181bc5330182}, intrahash = {22c7a1448fb43dfe2398ebae3378e1fa}, keywords = {dblp}, pages = {73-76}, publisher = {IEEE}, timestamp = {2019-10-17T12:39:38.000+0200}, title = {Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty.}, url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#BeneventiGGRB13}, year = 2013 }